Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters
Identifieur interne : 000882 ( Main/Repository ); précédent : 000881; suivant : 000883Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters
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Abstract
During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO2:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO<sub>2</sub>:Er doped with Si-nanoclusters</title><author><name sortKey="Wojdak, M" uniqKey="Wojdak M">M. Wojdak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London, Torrington Place</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation></author><author><name sortKey="Jayatilleka, H" uniqKey="Jayatilleka H">H. Jayatilleka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London, Torrington Place</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road</s1><s2>Toronto, Ontario M5S 3G4</s2><s3>CAN</s3><sZ>2 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Toronto, Ontario M5S 3G4</wicri:noRegion></affiliation></author><author><name sortKey="Shah, M" uniqKey="Shah M">M. Shah</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London, Torrington Place</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation></author><author><name sortKey="Kenyon, A J" uniqKey="Kenyon A">A. J. Kenyon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London, Torrington Place</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation></author><author><name sortKey="Gourbilleau, F" uniqKey="Gourbilleau F">F. Gourbilleau</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen</s1><s2>14050 CAEN</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Basse-Normandie</region><settlement type="city">CAEN</settlement></placeName></affiliation></author><author><name sortKey="Rizk, R" uniqKey="Rizk R">R. Rizk</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen</s1><s2>14050 CAEN</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Basse-Normandie</region><settlement type="city">CAEN</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0137308</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0137308 INIST</idno><idno type="RBID">Pascal:13-0137308</idno><idno type="wicri:Area/Main/Corpus">001004</idno><idno type="wicri:Area/Main/Repository">000882</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doped materials</term><term>Erbium additions</term><term>ITO layers</term><term>Luminescence decay</term><term>Nanocluster</term><term>Nanostructured materials</term><term>Photoluminescence</term><term>Purcell effect</term><term>Silicon oxides</term><term>Solid clusters</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Déclin luminescence</term><term>Addition erbium</term><term>Photoluminescence</term><term>Effet Purcell</term><term>Nanomatériau</term><term>Matériau dopé</term><term>Couche ITO</term><term>Couche mince</term><term>Oxyde de silicium</term><term>Agrégat solide</term><term>Nanoamas</term><term>Si</term><term>SiO2</term><term>7855H</term><term>7867</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO<sub>2</sub>:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>136</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO<sub>2</sub>:Er doped with Si-nanoclusters</s1></fA08><fA11 i1="01" i2="1"><s1>WOJDAK (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>JAYATILLEKA (H.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHAH (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>KENYON (A. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>GOURBILLEAU (F.)</s1></fA11><fA11 i1="06" i2="1"><s1>RIZK (R.)</s1></fA11><fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London, Torrington Place</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road</s1><s2>Toronto, Ontario M5S 3G4</s2><s3>CAN</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Université de Caen</s1><s2>14050 CAEN</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>407-410</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000506399710650</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0137308</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>During the fabrication of MOS light emitting devices, the thin film of active material is usually characterized by photoluminescence measurements before electrical contacts are deposited. However, the presence of a conductive contact layer can alter the luminescent properties of the active material. The local optical density of states changes due to the proximity of luminescent species to the interface with the conductive medium (the top electrode), and this modifies the radiative rate of luminescent centers within the active layer. In this paper we report enhancement of the observed erbium photoluminescence rate after deposition of indium tin oxide contacts on thin films of SiO<sub>2</sub>:Er containing silicon nanoclusters, and relate this to Purcell enhancement of the erbium radiative rate.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55H</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Déclin luminescence</s0><s5>41</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Luminescence decay</s0><s5>41</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Decadencia luminiscencia</s0><s5>41</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition erbium</s0><s5>42</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Erbium additions</s0><s5>42</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>43</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>43</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Effet Purcell</s0><s5>44</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Purcell effect</s0><s5>44</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>47</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>47</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>50</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Doped materials</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Couche ITO</s0><s5>62</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>ITO layers</s0><s5>62</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche mince</s0><s5>63</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Thin films</s0><s5>63</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Oxyde de silicium</s0><s2>NK</s2><s5>64</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>64</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Agrégat solide</s0><s5>66</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Solid clusters</s0><s5>66</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Nanoamas</s0><s5>67</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Nanocluster</s0><s5>67</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Nanomontón</s0><s5>67</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>SiO2</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>7855H</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>112</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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